product
si10us
characteristic
- tg≥270℃(dma)，td>400℃(5% loss, tga)
- higher flexural modulus
- lower x, y / z-axis cte
- halogen-free compatible with lead-free
application area
- emmc, dram
- ap, pa
- dual cm
- fingerprint, rfmodule, etc.
- product performance
- product certificate
- data download
| items | condition | unit | si10us |
|---|---|---|---|
| tg | dma | ℃ | 280 |
| td | 5% wt. loss |
℃ |
＞400 |
| cte (x/y-axis) | before tg |
ppm/℃ |
10 |
|
cte (z-axis) |
α1/α2 |
ppm/℃ |
25/135 |
| dielectric constant 1) (1ghz) | 2.5.5.9 | - | 4.4 |
|
dissipation factor 1) (1ghz) |
2.5.5.9 | - | 0.007 |
| peel strength1) | 1/3 oz, vlp cu |
n/mm |
0.80 |
| solder dipping | @288℃ | min | >30 |
| young's modulus | 50℃ | gpa | 26 |
|
young's modulus |
200℃ |
gpa |
23 |
| flexural modulus1) |
50℃ |
gpa |
32 |
|
flexural modulus1) |
200℃ |
gpa |
27 |
|
water absorption1) |
a | % | 0.14 |
| water absorption1) | 85℃/85%rh，168hr |
% |
0.35 |
|
flammability |
ul-94 |
rating |
v-0 |
| thermal conductivity | - | w/(m.k) | 0.61 |
| color | - | - | black |
remarks:
*specimen thickness: 0.10mm. test method is according to ipc-tm-650.
*1): specimen thickness: 0.80mm.
all the typical value listed above isfor your reference only, please turn to shengyi technology co.,ltd. fordetailed information, and all rights from this data sheet are reserved byshengyi technology co.,ltd.